Process of forming titanium silicide interconnects

Details Process of forming titanium silicide interconnects Process of forming titanium silicide interconnects

1997-06-23

1999-09-28

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438655, 438658, 438663, 438682, H01L 213205, H01L 214763

Patent

active

059603038

ABSTRACT:
A process for forming a titanium silicide interconnect includes applying a layer of polysilicon over a semiconductor layer. A layer of titanium silicide is formed over the layer of polysilicon. The layer of polysilicon and the layer of titanium silicide are etched to form a desired patterned structure. The exposed portions of the layer of titanium silicide are nitrified to form a thin layer of titanium nitride. The titanium nitride encapsulates the titanium silicide thereby improving the chemical and thermal properties of the interconnect.

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