Process for manufacturing a quantum memory element device

Details Process for manufacturing a quantum memory element device Process for manufacturing a quantum memory element device

1997-06-18

1999-09-28

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438962, 438149, 438151, 438300, H01L 2100, H01L 2184, H01L 2131, H01L 21469

Patent

active

059602660

ABSTRACT:
A quantum semiconductor memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is resistant to interference from noises. In order to accomplish this a control electrode is formed to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile quantum memory device can be realized with reduced size.

REFERENCES:
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patent: 5386381 (1995-01-01), Takizawa et al.
Nikkei Electronics, No. 444, 1988, pp. 151-157.
S. Tiwari et al, "A Low Power 77 K Nano-Memory with Single Electron Nano-Crystal Storage", 53rd Annual Device Research Conference Digest, 1995, pp. 50-51.
T. Hashimoto et al, "An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects", 21st Conference On Solid-State Devices And Materials, 1989, pp. 97-100.
K. Yano et al, "Room-Temperature Single-Electron Memory", IEEE Transactions On Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1628-1638.

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