Semiconductor integrated circuit device with wiring microstructu

Details Semiconductor integrated circuit device with wiring microstructu Semiconductor integrated circuit device with wiring microstructu

1993-11-09

1995-03-14

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257756, 257900, 257381, H01L 2348, H01L 2346, H01L 2906, H01L 2978

Patent

active

053979109

ABSTRACT:
In a semiconductor device of gate self-alignment structure, at least two lamination layer portions each composed of a gate electrode, an insulating film and a conductive film are formed on a semiconductor substrate with a contact hole sandwiched therebetween. A wire is formed on the respective lamination layer portions. Further, a total thickness of the conductive film and the wire is determined to be large enough to prevent impurities implanted into the wire from being doped into the gate electrode. In formation of the gate self-alignment structure, an insulating side wall is formed on the side wall of the contact hole, to insulate the gate electrode from the wire or vice versa.

REFERENCES:
patent: 5075762 (1991-12-01), Kondo et al.

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