Method of forming a ferroelectric film

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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Details

20419215, 2041922, 20419222, 20419226, C23C 1434

Patent

active

053974468

ABSTRACT:
A method of forming a ferroelectric film on a heated support is provided which includes the steps of forming a first layer on the heated support by sputtering a material including lead at a first pressure; and forming a second layer on the first layer by sputtering the material at a second pressure, the second pressure being lower than the first pressure.

REFERENCES:
patent: 3681226 (1972-08-01), Vogel
patent: 4437139 (1984-03-01), Howard
patent: 4911809 (1990-03-01), Wort et al.

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