Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-02-27
1999-09-28
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
36518501, 3651851, G11C 1300
Patent
active
059598964
ABSTRACT:
A flash memory cell. The cell includes a transistor with a floating gate that is formed from a number of crystals of semiconductor material. The crystals are disposed in the gate oxide of the transistor. The size of the crystals and their distance from a surface of a semiconductor layer of the transistor are chosen such that the crystals can trap a single electron by hot electron injection. Each trapped electron causes a measurable change in the drain current of the transistor. Thus, multiple data bits can be stored and retrieved by counting the changes in the drain current.
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Fears Terrell W.
Micro)n Technology, Inc.
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