Process for crystal growth of KTiOPO.sub.4 from solution

Details Process for crystal growth of KTiOPO.sub.4 from solution Process for crystal growth of KTiOPO.sub.4 from solution

1987-03-10

1988-08-02

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156622, 156624, 156DIG70, 156DIG79, 156DIG75, 156DIG81, C30B 904, C30B 1500

Patent

active

047612029

ABSTRACT:
Large flow-free crystals of KiTiOPO.sub.4 and the Rb, Tl, and As analogs are produced by preparing a melt of KtiOPO.sub.4 or its analog in a flux in which the ratio by weight of KTiOPO.sub.4 to the flux at the seeding temperature is equal to the saturation value of the KTiOPO.sub.4 in the flux, suspending a crytal of KTiOPO.sub.4 in the melt and then slowly decreasing the temperature of the melt while essentially spatially isothermal conditions are provided throughout the melt.

REFERENCES:
patent: 3949323 (1976-04-01), Bierlein et al.
patent: 4094731 (1978-06-01), Keyser et al.
patent: 4231838 (1980-11-01), Gier
patent: 4305778 (1981-12-01), Gier
Mullin, Crystallisation, CRC Press, Cleveland, Ohio, 1972, pp. 261 to 263.
Jacco et al., Flux Growth and Properties of KTiOPO.sub.4, Journal of Crystal Growth, vol. 70 (1984), pp. 484-488.

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