Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1995-06-15
1997-04-29
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257676, 257790, 257723, 257725, 257690, 257666, H01L 2328, H01L 2348
Patent
active
056252358
ABSTRACT:
Multichip integrated circuit modules having crossed bonding wires are disclosed together with methods of making the same. The integrated circuit dies of the multi-chip modules are affixed to a suitable die supporting substrate. The dies are then electrically coupled to each other and/or to associated lead traces by wire bonding the dies, with at least two of the bonding wires being crossed. The integrated circuit dies, the bonding wires, and at least a portion of the lead traces are enclosed in a package. In one embodiment, the bonding wires used in the wire bonding step are precoated with an insulating material. In another embodiment, the insulating layers are formed on the bonding wires after the wire bonding step to prevent shorting between the wires. The insulating layers may be formed in a variety of manners. By way of example, the wires can be oxidized, or they may be coated with a protective material.
REFERENCES:
patent: 5097317 (1992-03-01), Fujimoto et al.
patent: 5325268 (1994-06-01), Nachnani et al.
patent: 5362984 (1994-11-01), Konda et al.
patent: 5373188 (1994-12-01), Michii et al.
Crane Sara W.
National Semiconductor Corporation
Williams Alexander Oscar
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