Semiconductor device including an improved terminal structure

Details Semiconductor device including an improved terminal structure Semiconductor device including an improved terminal structure

1997-07-11

1999-09-28

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, H01L 27108, H01L 2976, H01L 2994

Patent

active

059593245

ABSTRACT:
A semiconductor device includes a first N-type region formed in a P-type silicon substrate, trenches formed in the substrate, second N-type regions each formed from at least the bottom of a corresponding one of the trenches into the substrate, these second N-type regions contacting each other to constitute a wiring layer and being also in contact with the first N-type region, and an electrode for applying a predetermined potential to the second N-type regions via the first N-type region. Since a potential is supplied to the wiring layer formed in the substrate via the first N-type region, no special design, such as formation of a terminal trench, is required. A potential can be easily supplied to the wiring layer formed in the semiconductor substrate, and the device can be easily fabricated.

REFERENCES:
patent: 4845051 (1989-07-01), Cogan et al.
patent: 4918502 (1990-04-01), Kaga et al.
patent: 5045904 (1991-09-01), Kobayishi et al.
patent: 5155059 (1992-10-01), Hieda
patent: 5242845 (1993-09-01), Baba et al.
patent: 5348905 (1994-09-01), Kenney
patent: 5521115 (1996-05-01), Park et al.
patent: 5629226 (1997-05-01), Ohtsuki

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