Semiconductor memory device having word line conductors provided

Details Semiconductor memory device having word line conductors provided Semiconductor memory device having word line conductors provided

1996-04-16

1999-09-28

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, H01L 27108

Patent

active

059593199

ABSTRACT:
A semiconductor memory device has word line conductor films, bit line conductor films transverse to the word line conductor films and memory cells provided at intersections between the word line conductor films and bit line conductor films. Each memory cell has a transistor structure formed at a surface portion of a semiconductor substrate and a capacitor structure formed over the semiconductor substrate. The word line conductor films are formed at a level lower than the capacitor structures of the memory cells to improve the resolution of patterns for the semiconductor memory device.

REFERENCES:
patent: 4962322 (1990-10-01), Chapman
patent: 5151772 (1992-09-01), Takahashi et al.
patent: 5247196 (1993-09-01), Kimura
patent: 5274258 (1993-12-01), Ahn
patent: 5412237 (1995-05-01), Komori et al.
patent: 5572053 (1996-11-01), Ema
patent: 5604365 (1997-02-01), Kajigaya et al.
Japanese Journal, "Nikkei Micro-Devices", Aug. 1994, pp. 32-37, Nikkei Business Publications, Inc.

Affiliated with

Also associated with

Rating

Semiconductor memory device having word line conductors provided does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having word line conductors provided, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having word line conductors provided will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-706369