Sensor to monitor plasma induced charging damage

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 61, 438 18, 257428, 324769, H01L 2358

Patent

active

059593091

ABSTRACT:
A monitor has been developed for measuring charging currents and voltages in a plasma environment. An antenna in the form of a small aluminum pad is connected to ground through a blocking diode, a blocking transistor, and a storage capacitor. The blocking transistor controls the flow of charge to the capacitor, its control gate being activated by a string of photodiodes that are exposed to the plasma. In a second embodiment, the photodiodes are omitted and the gate is connected directly to the antenna. This ensures that the capacitor charges only while the plasma is on. Once the plasma process has been completed, the monitor may be interrogated at leisure by reading the voltage stored on the capacitor. A resistor, connected in parallel with the capacitor, allows current, as well as voltage, measurements to be made. By using either n-channel or p-channel MOSFETs, electron charging or ion charging respectively may be measured. A plurality of such monitors are implemented on a single chip, each monitor using a resistor of a different value. This allows the I-V characteristics of the plasma to be determined.

REFERENCES:
patent: 5434108 (1995-07-01), Ko et al.
patent: 5514623 (1996-05-01), Ko et al.
patent: 5598009 (1997-01-01), Bui
JP McVittie, "International Symposium on Plasma Process-Induced Damage" Proceeding of the 1966, p. 7-10, Pubin American Vacuum Society.
Ma&McVittie, "International Symposium on Plasma Process-Induced Damage" Proceedings of the 1966, p. 20-23, Pubin American Vacuum Society.
W. Lukaszek et al. International Symposium on Plasma Process-Induced Damage, Proceeding of the 1966, p. 30-33, Pubin American Vacuum Society.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sensor to monitor plasma induced charging damage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensor to monitor plasma induced charging damage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensor to monitor plasma induced charging damage will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-706278

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.