Method of forming ABO.sub.3 films with excess B-site modifiers

Details Method of forming ABO.sub.3 films with excess B-site modifiers Method of forming ABO.sub.3 films with excess B-site modifiers

1994-07-05

1997-04-29

King, Roy V.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 79, 427226, 4271263, B05D 302, B05D 512

Patent

active

056247079

ABSTRACT:
A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkyated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosiy of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.

REFERENCES:
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5166759 (1992-11-01), Ueno et al.
patent: 5198269 (1993-03-01), Swartz et al.
E. Fujii, et al.; ULSI DRAM Technology with Ba.sub.0.7 Sr.sub.0.3 TiO.sub.3 Film of 1.3nm Equivalent SiO.sub.2 Thickness and 10.sup.-9 A/cm.sup.2 Leakage Current; IEDM Technical Digest, 1992; pp. 10.3.1-10.3.4.
Kuniaki Koyama, et al.; A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 For 256 DRAM; IEDM, Dec. 1991; pp. 32.1.1-32.1.4.
W.D. Kingery, et al.; Introduction to Ceramics, Second Edition; pp. 969-971, 1993.
G.M. Vest, et al.; Synthesis of Metallo-Organic Compounds For MOD Powders and Films; Materials Research Society Symp. Proc. vol. 60, 1986; pp. 35-42.
Robert W. West, et al.; PbTiO.sub.3 Films From Metalloorganic Precursors; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 35, No. 6, Nov. 1988; pp. 711-717.
M. Azuma, et al.; Electrical Characteristics of High Dielectric Constant Materials For Integrated Ferroelectrics; ISIF, 1992; pp. 109-117.
J.V. Mantese, et al.; Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method; MRS Bulletin, Oct. 1989; pp. 48-53.
B.M. Melnick, et al.; Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT For Ferroelectric Memories; Ferroelectrics, 1990, vol. 109, 1990; pp. 1-23.

Affiliated with

Also associated with

Rating

Method of forming ABO.sub.3 films with excess B-site modifiers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming ABO.sub.3 films with excess B-site modifiers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming ABO.sub.3 films with excess B-site modifiers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-704216