Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-10
1994-02-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257357, H01L 2362
Patent
active
052850951
ABSTRACT:
A protective transistor against electric surge is fabricated on a silicon substrate together with a semiconductor integrated circuit implemented by a plurality of component field effect transistors, and the gate oxide film of the protective transistor is larger in thickness of those of the component field effect transistors of the semiconductor integrated circuit so that the protective transistor is hardly broken down even if the component field effect transistors are scaled down for increasing the integration density.
REFERENCES:
patent: 4602267 (1986-07-01), Shirato
patent: 4786956 (1988-11-01), Puar
patent: 4807080 (1989-02-01), Clark
patent: 4893157 (1990-01-01), Miyazawa
patent: 5021853 (1991-06-01), Mistry
patent: 5083172 (1992-01-01), Kiyono
Hille Rolf
Loke Steven
NEC Corporation
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