Solid state image sensing device

Details Solid state image sensing device Solid state image sensing device

1992-04-09

1994-02-08

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257291, 257230, 257444, 257445, H01L 3106, H01L 2714

Patent

active

052850919

ABSTRACT:
A solid state image sensing device has a plurality of photo sensing elements arranged in a two-dimensional fashion at pixel units pixel unit in the horizontal and vertical directions. Each of the plurality of photo sensing elements is formed of a vertical selection transistor whose gate electrode is connected to a horizontal selection line and whose source electrode is connected to a vertical signal line. A photoelectric conversion element is provided under a channel region of the vertical selection transistor. A high concentration impurity is buried in lower portions of the source electrode and the channel region. When a voltage is applied to the source electrode, a signal charge which is subjected to a photoelectric conversion by the photoelectric conversion element is reset. Reset noise, Vth irregularity, smear component and the surface dark current can be reduced and blooming is suppressed.

REFERENCES:
IEDM Nakamura et al "A New MOS Image Sensor . . . Mode" 1986 Los Angeles, Calif. Dec. 7-10, 1986.

Affiliated with

Also associated with

Rating

Solid state image sensing device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state image sensing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state image sensing device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-700082