Method of making a semiconductor memory device having improved e

Details Method of making a semiconductor memory device having improved e Method of making a semiconductor memory device having improved e

1991-12-31

1994-02-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

052847870

ABSTRACT:
A semiconductor memory device and the method therefor is disclosed, in which memory cells having a transistor that has a source, a drain and a gate electrode, and a capacitor that has a storage electrode electrically connected to the source of the transistor, a dielectric layer and a plate electrode are formed on a semiconductor substrate in an orderly shape. In the memory cell, a covering layer is formed over the entire semiconductor region, except for an area defined to form the storage electrode, so as to be both insulated from the lower structure and the storage electrode. Accordingly, not only is prevented the phenomenon that data stored in a cell capacitor is destroyed by the residue of a polycrystal silicon layer, but also the surface thereof can be flattened in advance, limited only by the thickness of the polycrystal silicon layer.

REFERENCES:
patent: 5028990 (1991-07-01), Kotaki et al.
patent: 5100825 (1992-03-01), Fazan et al.
patent: 5155057 (1992-10-01), Dennison et al.

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