Method for growing multicomponent compound semiconductor crystal

Details Method for growing multicomponent compound semiconductor crystal Method for growing multicomponent compound semiconductor crystal

1984-09-19

1986-11-04

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156621, 422253, C30B 1700

Patent

active

046208976

ABSTRACT:
A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.

REFERENCES:
patent: 3600294 (1971-08-01), Rubin et al.
patent: 3758387 (1973-09-01), Zwicker et al.
patent: 3829366 (1974-08-01), Ives et al.
patent: 4247373 (1981-01-01), Shimano et al.
patent: 4496424 (1985-01-01), Terashima et al.
Kumagawa et al., J. Electrochem. Soc., Apr. 1973, vol. 120, pp. 583-584.
European Search Report from European Appln. No. 84306410.6.
Patent Abstracts of Japan, vol. 7, No. 131 (C-169) (1276), Jun. 8, 1983.

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