Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-05-18
1997-09-09
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438649, 438669, 438625, H01L 2144, H01L 2148
Patent
active
056656424
ABSTRACT:
A method of manufacturing semiconductor interconnection includes the steps of providing a bottom conductive layer having an auxiliary conductive layer applied on top of the bottom conductive layer. The auxiliary conductive layer is patterned and subsequently a further conductive layer is applied over the patterned auxiliary conductive layer. A mask is then applied over the further conductive layer to form a pillar connection which provides a reliable connection in a semiconductor device.
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Bowers Jr. Charles L.
Gurley Lynne A.
Sony Corporation
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