Plasma-process system with batch scheme

Details Plasma-process system with batch scheme Plasma-process system with batch scheme

1992-01-09

1994-02-08

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156345, 427 8, 118712, B01J 1900, B01L 500

Patent

active

052845478

ABSTRACT:
Ashing or etching is performed in a plasma surface-process apparatus and, e.g., a CO concentration of a discharge gas from the apparatus is monitored by a CO monitor. Since the generated CO concentration is correlated to a surface processing speed, an end point of surface processing can be detected by obtaining a CO concentration at the end point of surface processing in advance. When the state of the apparatus negatively changes, the plasma discharge state is changed, and, e.g., the generated CO concentration is also changed. The state of the apparatus can be obtained by monitoring the CO concentration. The plasma surface-process apparatus prevents the plasma from flowing into an inner chamber of a reaction chamber and allows only radicals generated by plasma discharge to flow into it, so that plasma processing can be effectively performed.

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Daley et al, "Determining the Etching End Point of Photoresist during Reactive Ion Etching", IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978.

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