Single-ended read, dual-ended write SCRAM cell

Static information storage and retrieval – Systems using particular element – Flip-flop

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365156, 36518902, 365230, 36523002, G11C 1100, G11C 700, G11C 800

Patent

active

058154329

ABSTRACT:
A static random-access memory (SRAM) cell with one or more storage elements connected to a sensing component by a single transmission line. Each storage element is connected to the transmission line through a switch so that one storage element at a time can be actively connected to the transmission line. The sensing component produces an output indicating the value stored in the active storage element then switched onto the transmission line.

REFERENCES:
patent: 3992703 (1976-11-01), Luisi et al.
patent: 5034923 (1991-07-01), Kuo et al.
patent: 5642325 (1997-06-01), Aug
patent: 5699292 (1997-12-01), Roberts

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Single-ended read, dual-ended write SCRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-ended read, dual-ended write SCRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-ended read, dual-ended write SCRAM cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-692583

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.