Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-11
1998-11-03
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257413, 257437, 257639, 257640, 257646, 257649, H01L 2976
Patent
active
058313214
ABSTRACT:
A semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography the semiconductor device has a semiconductor substrate and an electrode and wire pattern on the substrate. The semiconductor device also has an anti-reflective layer on the substrate which presents a variation in the composition of a constituent element along the film thickness over the semiconductor substrate. The anti-reflective layer is selected from the group consisting of SiO.sub.x, SiN.sub.x and Si.sub.x O.sub.y N.sub.z.
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Sony Corporation
Tran Minh-Loan
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