Electro-static discharge protection device having a threshold vo

Details Electro-static discharge protection device having a threshold vo Electro-static discharge protection device having a threshold vo

1996-12-13

1998-11-03

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257647, H01L 2362

Patent

active

058313117

ABSTRACT:
A low voltage electro-static discharge protective device includes a field oxide layer on a substrate, source/drain regions beside the field oxide layer in the substrate, and a threshold voltage adjustment region under the field oxide layer. The fabricating of the protective device includes forming a pad oxide layer and a silicon nitride layer on a substrate, etching the silicon nitride layer to form an opening, forming a oxide spacer on the exposed portion of the pad oxide layer around the periphery of the opening, implanting ions into the substrate, forming a field oxide layer in the opening so that the certain type of ions form a threshold voltage adjustment region under the field oxide layer, removing the silicon nitride layer, removing the exposed pad oxide layer, and forming source/drain regions beside the field oxide layer.

REFERENCES:
patent: 5158899 (1992-10-01), Yamagata
patent: 5239195 (1993-08-01), Compagne
patent: 5349227 (1994-09-01), Murayama
patent: 5371395 (1994-12-01), Hawkins
patent: 5406105 (1995-04-01), Lee
patent: 5463239 (1995-10-01), Muhlemann
patent: 5502317 (1996-03-01), Duvvury
patent: 5682051 (1997-10-01), Harrington, III

Affiliated with

Also associated with

Rating

Electro-static discharge protection device having a threshold vo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electro-static discharge protection device having a threshold vo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-static discharge protection device having a threshold vo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-692440