MOSFET having a particular SOI structure

Details MOSFET having a particular SOI structure MOSFET having a particular SOI structure

1996-10-15

1998-11-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, H01L 2701, H01L 2712, H01L 310392

Patent

active

058313087

ABSTRACT:
An MOSFET includes a substrate, an active region on the substrate, a first insulating element and a second insulating element located a distance apart from each other on the active region, the first and second insulating elements dividing the active region into a source region, a drain region, and a channel region, the channel region being disposed between the source region and the drain region, a third insulating film over the active region between the first and second insulating films, and a gate electrode over the third insulating film.

REFERENCES:
patent: 5627395 (1997-05-01), Witek et al.
"A new CMOS Structure Using a Transistor on a Lateral Epitarial Silicon Layer"; Terada et al, NEC Res & Develop., vol. 32, No. 1 pp. 20-28, Jan. 1991.

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