Semiconductor memory device that converges a floating gate thres

Details Semiconductor memory device that converges a floating gate thres Semiconductor memory device that converges a floating gate thres

1996-09-04

1998-11-03

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257321, H01L 29788

Patent

active

058313044

ABSTRACT:
The semiconductor memory device includes a first conductivity type semiconductor substrate, a tunnel gate oxide film formed on the semiconductor substrate, a floating gate formed on the tunnel gate oxide film, and a control gate formed on the floating gate. The semiconductor substrate includes second conductivity type source and drain regions, a second conductivity type lightly doped region formed so that it covers the source region, and a first conductivity type heavily doped region formed so that it covers at least the drain region and overlaps at least partially with the lightly doped region beneath the floating ate. The semiconductor memory device prevents excessive data erasure regardless of the dispersion in thickness of the tunnel gate oxide film, thereby preventing misreading and enhancing reliability of operation.

REFERENCES:
patent: 5378909 (1995-01-01), Chang et al.
patent: 5468991 (1995-11-01), Hsu
patent: 5477072 (1995-12-01), Goo
patent: 5574685 (1996-11-01), Hsu

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