Sensing circuit and method

Details Sensing circuit and method Sensing circuit and method

1997-05-21

1999-04-27

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518521, 36518522, 365210, G11C 1606

Patent

active

058986170

ABSTRACT:
A circuit (28) and method of sensing data stored in a memory circuit provide a reference current (I.sub.REF) that tracks memory cell current (I.sub.BIT) over a range of temperatures and power supply voltages. A comparator circuit (66) senses the memory cell current with respect to the reference current to produce the stored data (V.sub.DATA) By sensing current rather than voltage, the voltage swing on a high capacitance bitline (39) can be reduced to improve speed. The reference current is set during testing of the circuit by applying programming voltages (V.sub.WELL, V.sub.CG, V.sub.BL) to a reference device (52) that matches a storage device (36) in the memory cell (30).

REFERENCES:
patent: 5142495 (1992-08-01), Canepa
patent: 5557568 (1996-09-01), Miyamoto et al.
patent: 5654919 (1997-08-01), Kwon
patent: 5675535 (1997-10-01), Jinbo

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