Method of manufacturing a capacitance type acceleration sensor

Details Method of manufacturing a capacitance type acceleration sensor Method of manufacturing a capacitance type acceleration sensor

1996-06-27

1998-11-03

Breneman, R. Bruce

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 52, 438753, 438960, 216 2, H01L 21302

Patent

active

058307770

ABSTRACT:
A compact capacitance type acceleration sensor in which a mass portion having a plurality of movable electrodes are arranged in a recess portion formed on the surface of a p-type single crystal silicon base plate under the condition that the mass portion can be displaced. A plurality of stationary electrodes are arranged at a position opposed to the movable electrodes being separate from the movable electrodes. The mass portion is elastically supported by a support from the lower side and also elastically supported by four beams from the lateral side. Due to the above structure, the damping characteristic of the mass portion can be improved.

REFERENCES:
patent: 5500078 (1996-03-01), Lee
patent: 5542558 (1996-08-01), Benz et al.
patent: 5643803 (1997-07-01), Fukasda et al.

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