Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

1995-10-25

1998-09-29

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257359, 257364, 257368, 257380, 257903, H01L 2978, H01L 2976

Patent

active

058148671

ABSTRACT:
A semiconductor device includes a pair of transistors each having an active region defined on a surface of a semiconductor substrate, a gate insulation film formed on the active region, a gate electrode formed on the gate insulation film, and a diffusion layer formed in the active region of the semiconductor substrate, one of the transistors having an opening formed by removing part of the gate insulation film on the active region, through which opening the diffusion layer is directly connected to the gate electrode of the other transistor, an end portion of the gate electrode intersecting the outer periphery of the opening at at least one point on the diffusion layer.

REFERENCES:
patent: 5382807 (1995-01-01), Tsutsumi et al.
patent: 5404326 (1995-04-01), Okamoto
patent: 5489790 (1996-02-01), Lage

Affiliated with

Also associated with

Rating

Semiconductor device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-688124