Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-18
1998-09-29
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257372, 257351, 257350, 438228, 438526, 438529, H01L 2976, H01L 2994
Patent
active
058148663
ABSTRACT:
CMOS vertically modulated wells have a structure with a buried implanted layer for lateral isolation (BILLI). This structure includes a field oxide area, a first retrograde well of a first conductivity type, a second retrograde well of a second conductivity type adjacent the first well, and a BILLI layer below the first well and connected to the second well by a vertical portion. This structure has a distribution in depth underneath the field oxide which kills lateral beta while preventing damage near the surface under the field oxide.
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Diffusion/Implantation, Dec. 1993, "MeV Implantation Technology Next-generation manufacturing with current-generation equipment" John Ogawa Borland, Ron Koelsch. brochure pp. 1-8.
Fowler, "MosFet Devices with high-gate dielectric integrity", IBM TDB, vol. 17, No. 1, Jun. 1974.
Genus Inc.
Whitehead Carl W.
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