Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-24
1998-09-29
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257342, 257401, H01L 2976, H01L 2994
Patent
active
058148604
ABSTRACT:
A semiconductor IC device which does not incur a decrease in the dielectric strength by a leakage current flowing over the surface of the semiconductor device, the IC device comprising:
a semiconductor chip including a first function region, a second function region, and a third function region, wherein a current flowing through the third function region by an electric signal input to the first function region; and a first and a second pad provided on the surface of the semiconductor chip, and serving as electric connectors for the first and second function regions, wherein when there is no electric signal input to the first region, a depletion region is so formed as to surround the first and second function regions between the first and second function regions, and the third function region to improve the dielectric strength between the first and second function regions and the third function region, and wherein the first and second pads are so arranged as to be close to each other substantially in the center of the surface of the semiconductor chip.
REFERENCES:
patent: 5592026 (1997-01-01), Frisina et al.
Fahmy Wael
OKI Electric Industry Co., Ltd.
LandOfFree
Semiconductor IC device having first and second pads on surface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor IC device having first and second pads on surface , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor IC device having first and second pads on surface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-688078