Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-22
1998-09-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257317, 257318, 257321, 257322, 365175, 365177, 365182, 365184, H01L 29788
Patent
active
058148531
ABSTRACT:
A floating gate diode which can be used as a sourceless memory cell, and which may be arranged into an array of memory cells is disclosed. The floating gate diode comprises: a drain region formed in a substrate; an oxide overlying and associated with the drain region; and a floating gate overlying the oxide. Upon application of a voltage to the drain, a current between the drain and substrate is induced in proportion to an amount of electrons stored on the gate. The cells may be arranged into an array which comprises a substrate having a surface; a plurality of drain regions, one of said drain regions respectively corresponding to one of the plurality of cells, formed in the substrate; an oxide region overlying the plurality of drain regions on the surface of the substrate; and a plurality of floating gates overlying the oxide and respectively associated with the plurality of drain regions.
REFERENCES:
patent: 3919711 (1975-11-01), Chou
patent: 4432075 (1984-02-01), Eitan
patent: 4866493 (1989-09-01), Arima et al.
patent: 4920513 (1990-04-01), Takeshita et al.
patent: 4953928 (1990-09-01), Anderson et al.
patent: 5402371 (1995-03-01), Ono
patent: 5434813 (1995-07-01), Tamura et al.
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5483484 (1996-01-01), Endoh et al.
patent: 5502668 (1996-03-01), Shimoji et al.
patent: 5559735 (1996-09-01), Ono et al.
Fowler, "Switchable Diode with Control Electrode", IBM Technical Disclosure Bulletin, vol. 16, No. 3, Aug. 1973, pp. 870-871.
Jian Chen, et al., Subbreakdown Drain Leakage Current in MOSFET, IEEE Electron Device Lett.,l vol. EDL-8, No. 11, pp. 515-517, Nov. 1987.
T.Y. Chan, The Impact of Gate-Induced Drain Leakage Current on MOSFET Scaling, IEDM Technical Digest, pp. 718-721, 1987.
Chi Chang, et al., Corner-Field Induced Drain Leakage In Thin Oxide MOSFETS, IEDM Technical Digest, pp. 714-717, 1987.
Advanced Micro Devices , Inc.
Mintel William
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