Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-11
1998-09-29
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257532, 257535, H01L 2962
Patent
active
058148523
ABSTRACT:
A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta.sub.2 O.sub.5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node; c) chemical vapor depositing a capacitor dielectric layer of Ta.sub.2 O.sub.5 over the first electrically conductive capacitor plate; and d) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiC.sub.x N.sub.y O.sub.z, where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0. Such is preferably deposited by utilizing a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical, and utilizing deposition conditions of from 200.degree. C. to 600.degree. C. and from 0.1 to 100 Torr.
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Fazan Pierre C.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Wojciechowicz Edward
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