Semiconductor memory device using a plurality of internal voltag

Details Semiconductor memory device using a plurality of internal voltag Semiconductor memory device using a plurality of internal voltag

1996-08-16

1998-09-29

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257299, 257300, 365149, 36518901, 365226, H01C 27108, G11C 1124

Patent

active

058148515

ABSTRACT:
A semiconductor memory device has memory cells including a capacitor for storing data, and a transistor for inputting a ground voltage at its substrate and for selectively connecting the capacitor to a bit line. The device also has sense amplifiers that sense and amplify data that is transferred from the memory cells to the bit line. The device further has a first internal voltage supply circuit that generates a first internal voltage and supplies it to the sense amplifiers. The device also has a PMOS transistor for switching the first internal voltage from the first internal voltage supply circuit to the sense amplifiers, a second internal voltage supply circuit that generates a second internal voltage and supplies it to the sense amplifiers, and an NMOS transistor for switching the second internal voltage from the second internal voltage supply circuit to the sense amplifiers. Power lines to the sense amplifiers are separated from a power fine to the peripheral circuit, so that the device reduces noise effects on the power line to the peripheral circuit.

REFERENCES:
patent: 5119163 (1992-06-01), Ishihara et al.
patent: 5150325 (1992-09-01), Yanagisawa et al.
patent: 5229154 (1993-07-01), Oowaki et al.
patent: 5305270 (1994-04-01), Kim
patent: 5337270 (1994-08-01), Kawata et al.
patent: 5376839 (1994-12-01), Horiguchi et al.
patent: 5555519 (1996-09-01), Takashima et al.
patent: 5579524 (1996-11-01), Kikinis

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