Thin-film transistor, and its semiconductor device, active matri

Details Thin-film transistor, and its semiconductor device, active matri Thin-film transistor, and its semiconductor device, active matri

1995-08-16

1999-04-27

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 72, 257354, 349 43, H01L 2701

Patent

active

058982043

ABSTRACT:
A thin-film transistor of a type constructed of the semiconductor region on top of an insulating substrate and the gate electrode on the gate insulating layer on top of the channel of the semiconductor region. The thin-film transistor contains an impurity region of opposite semiconductor type of a source region and a drain region, at least where the side wall of the semiconductor region borders the gate electrode via the insulating layer. The impurity region is doped with a higher impurity concentration than the other semiconductor regions. The above arrangement dramatically lowers current leak in the thin-film transistor, and offers a substantially improved manufacturing yield of thin-film transistor.

REFERENCES:
patent: 4054895 (1977-10-01), Ham
patent: 4272880 (1981-06-01), Pashley
patent: 4755481 (1988-07-01), Faraone
patent: 4864380 (1989-09-01), Plus et al.
patent: 4974051 (1990-11-01), Matloubian et al.
patent: 5086009 (1992-02-01), Sangourd

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