Semiconductor device having solid phase diffusion sources

Details Semiconductor device having solid phase diffusion sources Semiconductor device having solid phase diffusion sources

1997-07-30

1999-04-27

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257900, 438230, H01L 2976

Patent

active

058982035

ABSTRACT:
A diffused server as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm-.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 5001082 (1991-03-01), Goodwin-Johansson
patent: 5024959 (1991-06-01), Pfiester
patent: 5061649 (1991-10-01), Takenouchi
patent: 5443994 (1995-08-01), Solheim
Wolf., "Silicon Processing for the VLSI Era vol. 2: Process Integration" Latice Press (1990), pp. 354-361.

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