Microwave integrated circuit

Details Microwave integrated circuit Microwave integrated circuit

1997-09-18

1999-04-27

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257398, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058982000

ABSTRACT:
Disclosed in a microwave integrated circuit, having a semiconductor substrate on which a field effect transistor is formed, a micro strip line, a contact hole and an interconnecting line. The microstrip line comprises a ground conductor, a signal line and a dielectric film interposed between the ground conductor and the signal line, and it is laminated on the semiconductor substrate. The contact hole is formed in the micro strip line so that the dielectric film above the field effect transistor is removed, and the interconnecting line is provided in the contact hole for connecting the field effect transistor with the ground conductor or signal line of the micro strip line.

REFERENCES:
patent: Re31580 (1984-05-01), Kooi
patent: 4890141 (1989-12-01), Tang et al.
Tsuneo Tokumitsu et al., "Three-Dimensional MMIC Technology: A Possible Solution to Masterslice MMIC's on GaAs and Si," IEEE Microwave and Guided Wave Letters, vol. 5, No. 11, Nov. 1995, pp. 411-413.

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