Substrate carrier having a streamlined shape and method for thin

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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118500, 118728, H01L 2144

Patent

active

058145613

ABSTRACT:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.

REFERENCES:
patent: 5403401 (1995-04-01), Haafkens et al.
patent: 5599397 (1997-02-01), Anderson et al.
patent: 5679159 (1997-10-01), Olsen

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