Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-14
1998-09-29
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
118500, 118728, H01L 2144
Patent
active
058145613
ABSTRACT:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.
REFERENCES:
patent: 5403401 (1995-04-01), Haafkens et al.
patent: 5599397 (1997-02-01), Anderson et al.
patent: 5679159 (1997-10-01), Olsen
Berry Renee R.
Bowers Jr. Charles L.
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