Interconnect capacitance between metal leads

Details Interconnect capacitance between metal leads Interconnect capacitance between metal leads

1996-06-04

1998-09-29

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438669, H01L 21441

Patent

active

058145583

ABSTRACT:
A semiconductor device and method for manufacturing same, having a low-dielectric constant material between metal leads in order to decrease unwanted capacitance. A metal layer 114 is deposited on a substrate 112. Metal leads 116 are formed in the metal layer 114. An oxide liner 118 is deposited on the metal leads 116, where the oxide liner 118 has a greater thickness on the tops of the metal leads 116 than on the sides of metal leads. A low-dielectric constant material 120 is deposited over the oxide liner 118 between the metal leads 116, where the low-dielectric constant material 120 is a material with a dielectric constant of less than 3.5.

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