Semiconductor memory device having capacitor-over-bitline cell w

Details Semiconductor memory device having capacitor-over-bitline cell w Semiconductor memory device having capacitor-over-bitline cell w

1997-11-14

2000-02-29

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060312629

ABSTRACT:
A storage capacitor with a double cylindrical storage electrode is incorporated in a semiconductor dynamic random access memory cell, the double cylindrical storage electrode is electrically connected through a node contact hole to a source region of a switching transistor, the double cylindrical storage electrodes are offset from the associated node contact holes so as not to have the minimum dimension in the planar configuration thereof, and cylinders are multiplied on a base portion of the storage electrode.

REFERENCES:
patent: 5438010 (1995-08-01), Saeki

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