Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-28
1995-04-18
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257345, 257378, 257341, H01L 2910, H01L 2934
Patent
active
054081173
ABSTRACT:
A semiconductor device comprises a first conductivity type semiconductor layer and a second conductivity type well region which is formed on the semiconductor layer. The well region includes a first semiconductor region of a first depth and a second semiconductor region of a second depth deeper than the first depth which is provided in the central portion of the first semiconductor region. The ratio of the first depth to the second depth is settled in a range from 0.85 to 0.95 in order to increase the breakdown voltage of the semiconductor device.
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Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
Monin D.
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