Substrate surface treatment method

Details Substrate surface treatment method Substrate surface treatment method

1995-10-12

1998-09-29

Turner, Archene

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427249, 427450, C30B 3312

Patent

active

058141944

ABSTRACT:
Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

REFERENCES:
patent: 5064682 (1991-11-01), Kiyama et al.
patent: 5160405 (1992-11-01), Miyauchi et al.
patent: 5368897 (1994-11-01), Kirihara et al.
patent: 5483038 (1996-01-01), Ota et al.
Study of the Ion Sputer-machining (2nd report)--Fine Machining of Diamond, by Iwao Miyamoto et al., 1980, pp. 101-106.

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