Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1996-08-19
1998-09-29
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566461, 1566571, 437228, 437195, H01L 213065
Patent
active
058141863
ABSTRACT:
An etchant gas and process for using the etchant gas is provided for removing a spin-on glass (SOG) material. The gas composition is chosen as a combination of CHF.sub.3, O.sub.2 and Ar inserted into a parallel electrode reactor. The reactor pressure is maintained between 755 to 845 mTorr while the rf power is maintained at approximately 400 watts. CHF.sub.3 flow rate is optimally chosen between 55 and 65 sccm, with O.sub.2 flow rate approximately equal to 15 sccm and Ar flow rate approximately equal to 266 sccm. The processing parameters are optimally chosen to remove SOG at a rate exceeding 1.5 times the rate in which underlying TEOS-based oxide is removed. Accordingly, the present gas composition and processing methodology ensures SOG is completely removed in thicker areas overlying sparsely spaced interconnect, and that underlying oxide is not removed beneath thinner SOG residing above densely spaced interconnect. The process sequence is chosen having a single etch step, with substantial improvements in SOG etch rate so as to improve wafer throughput.
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Adjodha Michael E.
Advanced Micro Devices , Inc.
Breneman R. Bruce
Daffer Kevin L.
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