Method of preventing overpolishing in a chemical-mechanical poli

Details Method of preventing overpolishing in a chemical-mechanical poli Method of preventing overpolishing in a chemical-mechanical poli

1997-05-30

2000-02-29

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

060308923

ABSTRACT:
A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.

REFERENCES:
Wolf, S. Silicon Processing for the VLSI Era, vol. II, Lattice Press, pp. 229-232, 1990.

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