Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1997-05-20
2000-02-29
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438406, 438456, 438459, H01L 21265
Patent
active
060308834
ABSTRACT:
At a room temperature, cleaned glass substrates 8a, 8b are suitably positioned and placed one upon another. A hydrofluoric acid solution or alkaline solution 10 is dropped into the bonding interface between the glass substrates 8a, 8b. The hydrofluoric acid solution or alkaline solution thus dropped spreads along the bonding interface. At a room temperature, a load is then applied to the upper glass substrate 8a and allowed to stand for a suitable period of time, thus bonding the glass substrates to each other.
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patent: 5441591 (1995-08-01), Imuthrn et al.
Nakanishi, H. et al., Studies on SiO2-SiO2 Bonding with Hydrofluoric Acid-Room Temperature and Low Stress Bonding Technique for MEMS, Proceedings of the Eleventh Annual International Workshop on IEEE Micro Electro Mechanical Systems, pp. 609-614, 1998.
Nakanishi Hiroaki
Nishimoto Takahiro
Guerrero Maria
Jr. Carl Whitehead
Shimadzu Corporation
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