High throughput chemical vapor deposition process capable of fil

Details High throughput chemical vapor deposition process capable of fil High throughput chemical vapor deposition process capable of fil

1998-05-05

2000-02-29

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438695, 438759, H01L 21762

Patent

active

060308818

ABSTRACT:
A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses an etch/dep ratio greater than one to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.

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