Semiconductor device with antireflection film

Details Semiconductor device with antireflection film Semiconductor device with antireflection film

1995-07-26

1997-02-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257412, 257413, 257437, H01L 31232

Patent

active

056001657

ABSTRACT:
A semiconductor device in which patterning is effected using a silicon oxynitride (SiON) based thin film as an anti-reflection film and in which electrical properties are prohibited from being deteriorated by hydrogen contained in the SiON based thin film. The semiconductor device has a substrate, a gate insulating film formed on the surface of the substrate, a gate electrode formed on the gate insulating film, and a first antireflection film having a pattern in common with the gate electrode. The semiconductor device also has a hydrogen permeation prohibiting film formed between the gate insulating film and the first antireflection film. The first antireflection film contains hydrogen and is formed on the gate electrode.

REFERENCES:
patent: 5068697 (1991-11-01), Noda et al.
patent: 5326431 (1994-07-01), Kadomura
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5459354 (1995-10-01), Hara
patent: 5488246 (1996-01-01), Hayashide et al.

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