Multichannel field effect device

Details Multichannel field effect device Multichannel field effect device

1995-01-20

1997-02-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257272, 257133, 257107, H01L 2976

Patent

active

056001606

ABSTRACT:
A dual channel field-effect switching device is disclosed. The switching device includes two adjacent semiconductor regions of opposite polarity forming a PN junction therebetween. A gate structure overlying the semiconductor regions controls the presence of two electrically isolated conductive channels formed in selected portions of the semiconductor regions.

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"Insulated-Gate Planar Thyristors: I-Structure and Basic Operation" by James D. Plummer et al., IEEE Transactions on Electron Devices, vol. Ed-27, No. 2, Feb. 1980.

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