Chemically amplified resist large in transparency and sensitivit

Details Chemically amplified resist large in transparency and sensitivit Chemically amplified resist large in transparency and sensitivit

1998-07-29

2000-02-29

Chu, John S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430910, G03F 7004

Patent

active

060307471

ABSTRACT:
Monomers expressed by the following general formula are polymerized so as to obtain a polymer, and the polymer and a photoacid generator are dissolved in a solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R.sup.3 represents a hydrogen atom, a methyl group or an acetyl group.

REFERENCES:
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patent: 5443690 (1995-08-01), Takechi et al.
patent: 5851727 (1998-12-01), Choi et al.
Tx Neenan, et al., "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species", by SPIE vol. 1086 Advances in Resist Technology and Processing VI(1989), pp. 2-10.
"Arf excimer Laser Lithography (3)--Evalution of Resist".
"Allicycle Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification"; Satoshi Takechi et al. pp. 439-446.
Single-Layer chemically amplified photoresists for 193-nm lithography by J. Vac Sci. Technol. B. vol. 11, No. 6 Nov./Dec. 1993.
Novel Alkaline-Soluble Alicyclic Polymer Poly(TCDMACOOH) for ArF Chemically Amplified Positive Resists by SPIE vol. 2724 pp. 377-385; Katsumi Maeda et al.
A New Preparation of Triarylsulfonium and --selenonium Salts via the Copper(II)--Catalyzed Arylation of Sulfides and Selenides with Diaryliodonium Salts by J. Org. Chem vol. 43 No. 15 1978.
"Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators" T. Ueno et al. pp. 413-424.
"Challenges in Excimer Laser Lithography for 256M DRAM and beyond" M. Endo et al. IEDM Tech. Digest 1992.

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