Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1995-11-01
1999-04-27
Chang, Ceila
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
257760, 257774, 257915, H01L 2100
Patent
active
058973761
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a reflection reducing film on a film having a high reflectance and forming a photoresist on the first reflection reducing film. When the photoresist is patterned by selectively exposing the photoresist to an exposure light through a photomask by photolithography technology, the photoresist is not exposed by a light reflected by the film having high reflectance, thereby allowing a pattern of the photoresist to be formed which corresponds to the photomask.
REFERENCES:
patent: 4592132 (1986-06-01), Lee et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4723197 (1988-02-01), Takiar et al.
patent: 4808552 (1989-02-01), Anderson
patent: 4884120 (1989-11-01), Mochizuki et al.
patent: 5278448 (1994-01-01), Fujii
patent: 5281850 (1994-01-01), Kanamori
patent: 5317193 (1994-05-01), Watanabe
patent: 5319246 (1994-06-01), Nagamine et al.
patent: 5323047 (1994-06-01), Nguyen
Chang Ceila
Seiko Instruments Inc.
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