Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-06
1999-04-27
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438656, 438665, 438683, H01L 21283
Patent
active
058973737
ABSTRACT:
The present invention relates to a method of manufacturing semiconductor components having a titanium nitride layer including the steps of providing a semiconductor substrate with a transistor including a gate and source/drain regions, depositing an insulating layer above the semiconductor substrate, etching the insulating layer to form an opening exposing the source/drain region below, depositing an ultra-thin titanium nitride layer having a grainy particulate profile and a thickness of about 0.5 nm to 2 nm around the edge and at the bottom of the opening, depositing a metallic layer over various aforementioned layers, and forming a metal silicide layer by heating the semiconductor substrate to allow the metallic layer to react with silicon on the semiconductor substrate surface.
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Chen Lih-Juann
Hsieh Wen-Yi
Hsieh Yong-Fen
Lin Jenn-Tarng
Peng Yuan-Ching
Quach T. N.
United Microelectronics Corp.
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