Method for forming interconnection of a semiconductor device

Details Method for forming interconnection of a semiconductor device Method for forming interconnection of a semiconductor device

1996-09-16

1999-04-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438639, 438672, H01L 21441

Patent

active

058973699

ABSTRACT:
A method for forming an interconnection of a semiconductor device, includes the steps of forming an insulating layer on a substrate on which a lower conductive layer is formed, selectively removing the insulating layer to form a first connecting hole and a second connecting hole for the pattern of an upper conductive layer, growing a first conductive material in the first connecting hole to form a buried plug and then depositing a second conductive material on the surface of the insulating layer to form a barrier layer, and depositing a third conductive material on the barrier layer to fill the second connecting hole and then patterning it to form an upper conductive layer.

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Dual Damascene; A ULSI Wiring Technology Jun. 11-12, 1991 VMIC Conference TH-0359-0/91/0000-0144 $01.00 C 1991 IEEE,Carter W. Kaanta, et al, pp. 144-152.

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