Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-02-21
1999-04-27
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438608, 438609, 438635, 438637, H01L 2128, H01L 21336, H01L 2184
Patent
active
058973451
ABSTRACT:
A semiconductor device comprising a thin film transistor, and a process for fabricating the same, the process comprising: a first step of forming an island-like semiconductor layer, a gate insulating film covering the semiconductor layer, and a gate electrode comprising a material containing aluminum as the principal component formed on the gate insulating film; a second step of introducing impurities into the semiconductor layer in a self-aligned manner by using the gate electrode as the mask; a third step of forming an interlayer dielectric to cover the gate electrode, and forming a contact hole in at least one of source and drain; a fourth step of forming over the entire surface, a film containing aluminum as the principal component, and then forming an anodic oxide film by anodically oxidizing the film containing aluminum as the principal component; a fifth step of etching the film containing aluminum as the principal component and the anodic oxide film, thereby forming a second layer interconnection containing aluminum as the principal component; and a sixth step of forming over the second layer interconnection, a film containing silicon nitride as the principal component thereof.
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Ferguson Jr. Gerald J.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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