Method of making a thin film semiconductor device

Details Method of making a thin film semiconductor device Method of making a thin film semiconductor device

1997-01-06

1999-04-27

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438154, 438163, 438164, H01L 2100

Patent

active

058973443

ABSTRACT:
Method of improving making contact with the source/drain regions of thin-film transistors. A substantially triangular insulator determines contacts with the source/drain regions by a self-aligning process. The width of this insulator can be determined without performing mask alignment. Furthermore, the width can be reduced. Therefore, the sheet resistance of the source/drain regions presents no serious problems.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5407837 (1995-04-01), Eklund
patent: 5426062 (1995-06-01), Hwang
"Tapered Sidewall Field-Effect Transistor Gates", IBM Tech Disclosure Bulletin, vol. 29, No. 7, Dec. 1986.
IBM Technical Disclosure Bulletin, vol. 29, No. 7, Dec. 1986, p. 2913, "Tapered Sidewall Field-Effect Transistor Gates".

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